Low temperature reflow method for filling high aspect ratio...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S659000, C438S658000

Reexamination Certificate

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06903014

ABSTRACT:
Impurities are added to a conductor layer in a semiconductor process to prevent formation of void spaces and encourage complete filling of contacts. The impurities reduce the melting point and surface tension of a conductor layer, thereby improving filling characteristics during a reflow step. The impurities may be added at any time during the process, including during conductor deposition and/or reflow.

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