Low temperature production of large-grain polycrystalline...

Details Low temperature production of large-grain polycrystalline... Low temperature production of large-grain polycrystalline...

2007-04-10

2007-04-10

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C257S066000

Reexamination Certificate

active

10972760

ABSTRACT:
An oxide or nitride layer is provided on an amorphous semiconductor layer prior to performing metal-induced crystallization of the semiconductor layer. The oxide or nitride layer facilitates conversion of the amorphous material into large grain polycrystalline material. Hence, a native silicon dioxide layer provided on hydrogenated amorphous silicon (a-Si:H), followed by deposited Al permits induced crystallization at temperatures far below the solid phase crystallization temperature of a-Si. Solar cells and thin film transistors can be prepared using this method.

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