Low temperature process for depositing epitaxial layers

Details Low temperature process for depositing epitaxial layers Low temperature process for depositing epitaxial layers

1985-02-08

1986-11-18

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG72, 427 87, 427 541, C30B 2502

Patent

active

046234268

ABSTRACT:
The specification discloses a low temperature process for depositing an epitaxial layer of a selected oxide or a selected sulfide material on a chosen substrate. The substrate is exposed to a chosen vapor phase reactant in the presence of neutral, charge-free oxygen atoms or sulfur atoms to produce a reaction between the atomic species and the vapor phase reactant to form the desired oxide or sulfide and induce the crystalline growth thereof as an epitaxial layer on the surface of the substrate. The atomic oxygen or the atomic sulfur is formed at a low temperature by the photochemical dissociation of a selected oxygen-containing precursor or a selected sulfur-containing precursor, respectively.

REFERENCES:
patent: 3200018 (1965-08-01), Grossman
patent: 3920860 (1975-11-01), Freller et al.
patent: 4297189 (1981-10-01), Smith et al.
patent: 4320178 (1982-03-01), Chemla et al.
patent: 4333792 (1982-06-01), Smith
patent: 4371587 (1983-02-01), Peters
patent: 4447469 (1984-05-01), Peters
Mullin et al, Jl. of Crystal Growth, 55 (1981) pp. 92-106, 10/81.
Shiosaki et al, Appl. Phys. Lett., 39(5) 9/1/81.
Translation of Sasaki Patent.
Messick, Jl. of Applied Physics, V47, 140.11, 11/76.

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