Low-temperature, photo-induced epitaxy

Details Low-temperature, photo-induced epitaxy Low-temperature, photo-induced epitaxy

1990-10-04

1992-06-23

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG64, 437 19, 437 81, 437126, 437916, 437936, C30B 2502

Patent

active

051239957

ABSTRACT:
Disclosed herein is a process for producing a thin film of epitaxial material on a substrate surface at low temperatures under ultrahigh vacuum conditions. In general, precursor compounds are deposited, and converted into the epitaxial material, on the substrate surface at a temperature at which they undergo no substantial dissociation. By way of example, a beam-deposited admixture of dimethyl tellurium and dimethyl cadmium is efficiently converted to an epitaxial cadmium telluride crystal on the surface of a GaAs(100) substrate placed in an ultrahigh vacuum chamber by low power, 193 nm laser irradiation (pulse fluence approximately 6 mJ cm.sup.-2) at substrate temperature of -150.degree. C. and by subsequent annealing at 200.degree. C. for 30 seconds. In addition to efficient use of precursors, this process also permits considerable improvement of pattern resolution.

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