Low temperature nitride used as Cu barrier layer

Details Low temperature nitride used as Cu barrier layer Low temperature nitride used as Cu barrier layer

2007-03-06

2007-03-06

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S687000, C438S792000

Reexamination Certificate

active

11328865

ABSTRACT:
A method of depositing a non-conductive barrier layer onto a metal surface wherein the resistance of the metal remains substantially unchanged before and after the non-conductive barrier layer deposition. The deposition process provides a low temperature processing environment so as to inhibit the formation of impurities such as silicide in the metal, wherein the silicide can adversely increase the resistance of the underlying metal.

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Audisio et al., “Silicon Nitride Coatings on Copper,” J. Electrochem. Soc.: Electromemical Science and Technology, vol. 119, No. 4, 1972, pp. 408-411.

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