Semiconductor device manufacturing: process – Making passive device – Resistor
Reexamination Certificate
2005-12-06
2005-12-06
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
Resistor
C438S240000, C438S681000
Reexamination Certificate
active
06972239
ABSTRACT:
A method of fabricating a PCMO thin film at low temperature for use in a RRAM device includes preparing a PCMO precursor; preparing a substrate; placing the substrate into a MOCVD chamber; introducing the PCMO precursor into the MOCVD chamber to deposit a PCMO thin film on the substrate; maintaining a MOCVD vaporizer at between about 240° C. to 280° C. and maintaining the MOCVD chamber at a temperature of between about 300° C. to 400° C.; removing the PCMO thin-film bearing substrate from the MOCVD chamber; and completing the RRAM device.
REFERENCES:
patent: 6204139 (2001-03-01), Liu et al.
patent: 6673691 (2004-01-01), Zhuang et al.
patent: 6911361 (2005-06-01), Zhang et al.
patent: 2004/0170761 (2004-09-01), Li et al.
patent: 2004/0180507 (2004-09-01), Zhang et al.
Liu et al.,Electric-pulse-induced reversible resistance change effect in magnetoresistive films, Applied Physics Letters, vol. 76, No. 19; May 8, 2000, pp 2749-2751.
U.S. Appl. No. 10/377,244, filed Feb. 27, 2003, Zhuang et al.
Charneski Lawrence J.
Evans David R.
Hsu Sheng Teng
Li Tingkai
Zhuang Wei-Wei
Curtin Joseph P.
Nhu David
Ripma David C.
Sharp Laboratories of America Inc.
LandOfFree
Low temperature MOCVD processes for fabrication of Pr X Ca... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low temperature MOCVD processes for fabrication of Pr X Ca..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature MOCVD processes for fabrication of Pr X Ca... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3500673