Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Plural fluid growth steps with intervening diverse operation
Reexamination Certificate
2005-07-26
2005-07-26
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Plural fluid growth steps with intervening diverse operation
C438S935000
Reexamination Certificate
active
06921707
ABSTRACT:
A process for forming metal oxides, including mixed metal oxides, in a dilute vapor phase at a temperature below approximately 350 degrees Fahrenheit. The resulting novel oxides can be formed as dense films or coatings with very high strain-to-crack values, or as nanoparticles, depending primarily upon the concentration of the reactants. The novel oxides are formed by the reaction in the vapor phase of reactive metal molecules with atomic oxygen. The reactions are instantaneous at room temperature, which permits this process to be applied to the formation of metal oxides on temperature sensitive substrates. The atomic oxygen and highly reactive metal containing molecules are generated by the application of an effective amount of ultraviolet radiation.
REFERENCES:
patent: 5351328 (1994-09-01), Kakii et al.
Scott David
Zinn Alfred
Dang Phuc T.
Jagger Bruce A.
Ultramet
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