Low-temperature, low-resistivity heavily doped p-type...

Details Low-temperature, low-resistivity heavily doped p-type... Low-temperature, low-resistivity heavily doped p-type...

2008-09-02

2008-09-02

Chen, Bret (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C427S255393

Reexamination Certificate

active

10769047

ABSTRACT:
A method to create a low resistivity P+in-situ doped polysilicon film at low temperature from SiH4and BCl3with no anneal required. At conventional dopant concentrations using these source gases, as deposition temperature decreases below about 550 degrees C., deposition rate decreases and sheet resistance increases, making production of a high-quality film impossible. By flowing very high amounts of BCl3, however, such that the concentration of boron atoms in the resultant film is about 7×1020or higher, the deposition rate and sheet resistance are improved, and a high-quality film is produced.

REFERENCES:
patent: 4302763 (1981-11-01), Ohuchi et al.
patent: 4782465 (1988-11-01), Uchida
patent: 4952425 (1990-08-01), Allen et al.
patent: 5096856 (1992-03-01), Freeman
patent: 5189504 (1993-02-01), Nakayama et al.
patent: 5389570 (1995-02-01), Shiozawa
patent: 5721175 (1998-02-01), Kunishima et al.
patent: 5864161 (1999-01-01), Mitani et al.
patent: 6001717 (1999-12-01), Lien
patent: 6034882 (2000-03-01), Johnson et al.
patent: 6162711 (2000-12-01), Ma et al.
patent: 6410090 (2002-06-01), Wang
patent: 6420215 (2002-07-01), Knali et al.
patent: 6486065 (2002-11-01), Vyvoda et al.
patent: 6486066 (2002-11-01), Cleeves et al.
patent: 6495856 (2002-12-01), Kikuchi
patent: 6515888 (2003-02-01), Johnson et al.
patent: 6525953 (2003-02-01), Johnson
patent: 6541312 (2003-04-01), Vyvoda et al.
patent: 6580124 (2003-06-01), Cleeves et al.
patent: 6593624 (2003-07-01), Walker et al.
patent: 6624485 (2003-09-01), Johnson
patent: 6635556 (2003-10-01), Hemer et al.
patent: 6639312 (2003-10-01), Herner et al.
patent: 6649451 (2003-11-01), Vyvoda et al.
patent: 6664639 (2003-12-01), Cleeves
patent: 6905963 (2005-06-01), Noda et al.
patent: 2002/0028541 (2002-03-01), Lee et al.
patent: 2002/0102796 (2002-08-01), Lee et al.
patent: 2002/0105057 (2002-08-01), Vyvoda et al.
patent: 2002/0151120 (2002-10-01), Yamazaki et al.
patent: 2003/0022526 (2003-01-01), Vyvoda et al.
patent: 2003/0026157 (2003-02-01), Knall et al.
patent: 2003/0155582 (2003-08-01), Mahajani et al.
patent: 2003/0164491 (2003-09-01), Lee
patent: 2003/0173643 (2003-09-01), Herner
patent: 2004/0000679 (2004-01-01), Patel et al.
patent: 2004/0016991 (2004-01-01), Herner et al.
patent: 52097690 (1977-08-01), None
patent: 63150944 (1988-06-01), None
patent: 05206146 (1993-08-01), None
U.S. Appl. No. 10/045653, filed Nov. 2001, Vyvoda et al.
U.S. Appl. No. 10/185507, filed Jun. 2002, Vyvoda et al.
U.S. Appl. No. 10/270309, filed Oct. 2002, Vyvoda.
U.S. Appl. No. 10/270394, filed Oct. 2002, Vyvoda et al.
U.S. Appl. No. 10/326470, filed Dec. 2002, Herner et al.
U.S. Appl. No. 10/611245, filed Jun. 2003, Herner.
U.S. Appl. No. 10/611246, filed Jun. 2003, Cleeves.

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