Low temperature, high pressure silicon deposition method

Details Low temperature, high pressure silicon deposition method Low temperature, high pressure silicon deposition method

1996-06-19

1997-12-23

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427255, 4272552, 4272481, 427314, 437101, 437233, 437967, 148DIG1, C23C 1600

Patent

active

057005206

ABSTRACT:
A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesmann
patent: 4745088 (1988-05-01), Inoue et al.
Foster et al, "Silicon Films Deposited in a Vertical Flow Reactor", Solid State Technology, May, 1986 No Page Number.
Bunshah, "Deposition Technologies for Films and Coatings", 8. Chemical Vapor Deposition by Blocher, Jr. Noyes Publications. 1982, p. 357.

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