Low temperature high pressure silicon deposition method

Details Low temperature high pressure silicon deposition method Low temperature high pressure silicon deposition method

1997-10-08

1999-03-02

King, Roy V.

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

427255, 4272552, 427314, 438488, 148122, C23C 1600

Patent

active

058767975

ABSTRACT:
A method of producing doped and undoped silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.

REFERENCES:
patent: 4237150 (1980-12-01), Wiesmann
patent: 4745088 (1988-05-01), Inoue et al.

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