Low-temperature fusion of dissimilar semiconductors

Details Low-temperature fusion of dissimilar semiconductors Low-temperature fusion of dissimilar semiconductors

1991-12-30

1993-05-04

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1563082, 1563086, 156643, 156657, 156662, H01L 21306, B44C 122, B32B 3120, C09J 502

Patent

active

052078647

ABSTRACT:
A method of fusing together wafers (10, 30) or other semiconductor bodies comprising different semiconductors. In the case that wafers of InP and GaAs or other compound semiconductors are to be bonded, the wafers are cleaned with etchant, and their surfaces are placed together. While the wafers are forced together under moderate pressure and clean hydrogen flows over the wafers, the temperature is raised to 650.degree. C., close to the deposition temperature for epitaxial InP, and maintained for 30 minutes. In the case that one of the wafers is silicon (FIG. 5), both wafers are assembled together in hydrofluoric acid, in which the two wafers bond together by van der Waals force. Then, the assembly is placed in a furnace and annealed at 650.degree. C. A sharp hetero-interface (32, 66, 70) is produced with only surface defects which do not propagate into the bulk. Either wafer may be preformed with a multi-layer opto-electronic structure (12).

REFERENCES:
patent: 4738935 (1988-04-01), Shimbo et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
Z. L. Liau et al, "Wafer fusion: A novel technique for optoelectronic device fabrication and nonolithic integration," Applied Physics Letters, 1990, vol. 56, pp. 737-739.
Y. H. Lo et al, "Bonding by atomic rearrangement of InP/InGaAsP 1.5 .mu.m wavelength lasers on GaAs substrates," Applied Physics Letters, 1991, vol. 58, pp. 1961-1963.
M. Grundmann et al, "Low-temperature metalorganic chemical vapor deposition of InP on Si(001)," Applied Physics Letters, 1991, vol. 58, pp. 284-286.

Affiliated with

Also associated with

Rating

Low-temperature fusion of dissimilar semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-temperature fusion of dissimilar semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-temperature fusion of dissimilar semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1972828