Low temperature formation of low resistivity titanium silicide

Details Low temperature formation of low resistivity titanium silicide Low temperature formation of low resistivity titanium silicide

1996-01-16

1998-10-27

Niebling, John

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257768, 438656, 438664, H01L 2945

Patent

active

058281312

ABSTRACT:
Low resistivity titanium silicide, and semiconductor devices incorporating the same, may be formed by titanium alloy comprising titanium and 1-20 atomic percent refractory metal deposited in a layer overlying a silicon substrate, the substrate is then heated to a temperature sufficient to substantially form C54 phase titanium silicide. The titanium alloy may further comprise silicon and the refractory metal may be Mo, W, Ta, Nb, V, or Cr, and more preferably is Ta or Nb. The heating step used to form the low resistivity titanium silicide is performed at a temperature less than 900.degree. C., and more preferably between about 600.degree.-700.degree. C.

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