Low temperature fabrication of conductive micro structures

Details Low temperature fabrication of conductive micro structures Low temperature fabrication of conductive micro structures

2006-06-28

2010-10-26

Lindsay, Jr., Walter L (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

C257S414000, C257S415000, C257SE29166

Reexamination Certificate

active

07821010

ABSTRACT:
A method of fabricating a micro structure includes depositing amorphous silicon over a substrate having an electric circuit at a temperature below 550° C. to form a first structure portion, wherein at least part of the first structure portion is configured to receive an electrical signal from the electric circuit.

REFERENCES:
patent: 5665997 (1997-09-01), Weaver et al.
patent: 6356378 (2002-03-01), Huibers
patent: 6469821 (2002-10-01), Bartlett et al.
patent: 6487001 (2002-11-01), Greywall
patent: 6819470 (2004-11-01), Meier et al.
patent: 6870659 (2005-03-01), Aubuchon
patent: 6914711 (2005-07-01), Novotney et al.
patent: 6992810 (2006-01-01), Pan et al.
patent: 7148603 (2006-12-01), Garcia et al.
patent: 7167298 (2007-01-01), Pan
patent: 7245415 (2007-07-01), Pan
patent: 2004/0240033 (2004-12-01), Pan et al.
patent: 2005/0128564 (2005-06-01), Pan
patent: 2006/0276015 (2006-12-01), Morris
Roya Maboudian, “Surface processes in MEMS technology”, 1998, Surface Science Reports 30, pp. 207-268.
USPTO Final Office Action in U.S. Appl. No. 11/936,711, mailed Sep. 22, 2009, 7 pages.

Affiliated with

Also associated with

Rating

Low temperature fabrication of conductive micro structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low temperature fabrication of conductive micro structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature fabrication of conductive micro structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4174097