Low temperature etching in cold-wall CVD systems

Details Low temperature etching in cold-wall CVD systems Low temperature etching in cold-wall CVD systems

1993-07-30

1995-06-06

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

216 67, 134 11, B44C 122

Patent

active

054219574

ABSTRACT:
An improved method of etching or cleaning a cold-wall chemical vapor deposition chamber that is substantially moisture-free at a low chamber temperature and a low chamber pressure while maintaining a satisfactory etch rate by using at least one etchant gas selected from the group consisting of nitrogen trifluoride, chlorine trifluoride, sulfur hexafluoride, carbon tetrafluoride or the like and mixtures thereof.

REFERENCES:
patent: 4820377 (1989-04-01), Davis
patent: 5022961 (1991-06-01), Izumi
patent: 5039388 (1991-06-01), Miyashita
patent: 5043299 (1991-08-01), Chang
patent: 5259923 (1993-11-01), Hori
Wolf, "Silicon Processing" vol. 1, Lattice Press, 1986, pp. 166-167.

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