Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Patent
1997-12-09
2000-05-02
Chaudhari, Chandra
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
438249, 438561, 438563, 438920, H01L 2138
Patent
active
060572167
ABSTRACT:
Doped semiconductor with high dopant concentrations in small semiconductor regions without excess spreading of the doped region are formed by:
REFERENCES:
patent: 3607468 (1968-10-01), Chang et al.
patent: 3718502 (1973-02-01), Gibbons
patent: 3808060 (1974-04-01), Hays et al.
patent: 3895965 (1975-07-01), MacRae et al.
patent: 4049478 (1977-09-01), Ghosh et al.
patent: 4274892 (1981-06-01), Templin
patent: 4389255 (1983-06-01), Chen et al.
patent: 4471524 (1984-09-01), Kinsbron et al.
patent: 4472212 (1984-09-01), Kinsbron
patent: 4544418 (1985-10-01), Gibbons
patent: 4694561 (1987-09-01), Lebowitz
patent: 4746377 (1988-05-01), Kobayashi et al.
patent: 4794434 (1988-12-01), Pelley, III
patent: 4833094 (1989-05-01), Kenney
patent: 5173440 (1992-12-01), Tsunashima et al.
patent: 5242859 (1993-09-01), Degelormo et al.
patent: 5283453 (1994-02-01), Rajeevakumar
patent: 5395786 (1995-03-01), Hsu et al.
patent: 5434109 (1995-07-01), Geissler et al.
patent: 5464793 (1995-11-01), Roehl
patent: 5494852 (1996-02-01), Gwin
patent: 5618751 (1997-04-01), Golden et al.
patent: 5656535 (1997-08-01), Ho et al.
patent: 5677219 (1997-10-01), Mazure et al.
Wolf, "Silicon Processing for the VLSI Era", vol. 1: Process Technology, pp. 182-187, 219-220, 262-266, 1986.
Economikos Laertis
Murthy Cheruvu S.
Shen Hua
Capella Steven
Chaudhari Chandra
International Business Machines - Corporation
LandOfFree
Low temperature diffusion process for dopant concentration enhan does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Low temperature diffusion process for dopant concentration enhan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low temperature diffusion process for dopant concentration enhan will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1593436