Low-temperature dielectric film formation by chemical vapor...

Details Low-temperature dielectric film formation by chemical vapor... Low-temperature dielectric film formation by chemical vapor...

2011-08-09

2011-08-09

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S784000, C438S787000, C438S788000, C438S791000, C257SE21278

Reexamination Certificate

active

07994070

ABSTRACT:
A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising water vapor into the process chamber, flowing a second process gas comprising dichlorosilane (DCS) into the process chamber, establishing a gas pressure of less than 2 Torr, and reacting the first and second process gases to thermally deposit a silicon oxide film on the plurality of substrates. One embodiment further includes flowing a third process gas comprising nitric oxide (NO) gas into the process chamber while flowing the first process gas and the second process gas; and reacting the oxide film with the third process gas to form a silicon oxynitride film on the substrate.

REFERENCES:
patent: 6913976 (2005-07-01), Lee
patent: 6936548 (2005-08-01), Dussarrat
patent: 7037785 (2006-05-01), Dong
patent: 7211295 (2007-05-01), Takahashi et al.
patent: 7294582 (2007-11-01), Haverkort et al.
patent: 7651730 (2010-01-01), Hasabe
patent: 2002/0182342 (2002-12-01), Ouellet et al.
patent: 2007/0234957 (2007-10-01), Lee
patent: 2009/0278235 (2009-11-01), Mizuno

Affiliated with

Also associated with

Rating

Low-temperature dielectric film formation by chemical vapor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low-temperature dielectric film formation by chemical vapor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low-temperature dielectric film formation by chemical vapor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2781099