Low temperature deep ultraviolet resist hardening process using

Details Low temperature deep ultraviolet resist hardening process using Low temperature deep ultraviolet resist hardening process using

1987-07-01

1989-05-02

Michl, Paul R.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Post imaging radiant energy exposure

430297, 430325, 430311, 430330, 430945, 528480, 528502, 522 2, G03C 500

Patent

active

048267562

ABSTRACT:
The disclosure relates to a method for low temperature (less than 120 degrees C.) hardening of photoresist pattern by providing a high power light beam consisting of light having a wavelength of about 300 nanometers and above which leads to crosslinking throughout the resist. A hot plate constant temperature (less than 120 degrees C.) is optionally used to accelerate the crosslinking reaction, thus incrasing throughput.

REFERENCES:
patent: 4596763 (1986-06-01), DiCarlo et al.
patent: 4659650 (1987-04-01), Moritz et al.
Willson et al., "Ultrafast Deep Uv Lithography with Excimer Laser", 3/82, pp. 53-55.
Satohara, "Method for Preventing The Deformation of Photoresistant Fine Pattern", 7/11/86, (Translation of 61--153287).

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