Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Patent
1997-12-01
1999-03-30
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
257703, H01L 23053, H01L 2312
Patent
active
058893229
ABSTRACT:
A low-temperature calcined ceramic of the present invention comprises a sintered body obtained by calcining a mixture of a glass and an SiO.sub.2 filler such as quartz or cristobalite, wherein the sintered body contains an SiO.sub.2 crystal having an X-ray diffraction image that the peak at the (101) plane of quartz or cristobalite is shifted at least 0.05.degree. (2.theta.) to the lower angle side. The ceramic containing the shifted crystal of quarts or cristobalite does not have a region of abruptly changing the thermal expansion and has a substantially linear thermal expansion curve. Accordingly, when the ceramic is used as an insulating substrate of a wiring boad, there is no possibility of abruptly causing the thermal expansion by heating, etc., at mounting on an external electric circuit boad and the occurrence of the inferior connection, etc., by thermal expansion can be effectively prevented.
REFERENCES:
patent: 4966742 (1990-10-01), Khoury et al.
patent: 5332701 (1994-07-01), Bryson et al.
patent: 5504371 (1996-04-01), Nimi et al.
patent: 5686172 (1997-11-01), Ohya et al.
Hamada Noriaki
Nagae Ken-ichi
Yamaguchi Kouichi
Yonekura Hideto
Clark S. V.
Jr. Carl Whitehead
Kyocera Corporation
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