Low temperature BPSG deposition process

Details Low temperature BPSG deposition process Low temperature BPSG deposition process

1996-06-25

2000-01-11

Jones, Deborah

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438787, 438790, H01L 2131, H01L 21469

Patent

active

060135832

ABSTRACT:
A process for the low temperature deposition of a thin film of borophosphosilicate glass ("BPSG") for use in semiconductor devices, such as DRAMs, is disclosed. The process includes utilizing R--OH groups as reagents to provide additional --OH groups so that an intermediate {Si(OH).sub.4 }.sub.n is formed having superior reflow properties so that the annealing and reflow steps may occur at temperatures less than 750.degree. C., which is the current processing temperature.

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