Low switching field magnetoresistive tunneling junction for high

Details Low switching field magnetoresistive tunneling junction for high Low switching field magnetoresistive tunneling junction for high

1997-12-18

1999-10-12

Mai, Son

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100

Patent

active

059663235

ABSTRACT:
A low switching field magnetoresistive tunneling junction memory cell including a first exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, a second exchange coupled structure having a pair of magnetoresistive layers and an exchange interaction layer sandwiched therebetween so as to pin the magnetic vectors of the pair of layers anti-parallel, and electrically insulating material sandwiched between the first and second exchange coupled structures to form a magnetoresistive tunneling junction. Each of the first and second exchange coupled structures, and hence the memory cell, has no net magnetic moment.

REFERENCES:
patent: 5173873 (1992-12-01), Wu et al.
patent: 5745406 (1998-04-01), Yamane et al.
patent: 5745408 (1998-04-01), Chen et al.
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5768183 (1998-06-01), Zhu et al.

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