Low switching field magnetic tunneling junction for high density

Details Low switching field magnetic tunneling junction for high density Low switching field magnetic tunneling junction for high density

1998-07-20

1999-09-14

Phan, Trong

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 365173, G11C 1100, G11C 1115

Patent

active

059532483

ABSTRACT:
A low switching field magnetic tunneling junction memory cell including an antiferromagnetically coupled structure having first and second magnetoresistive layers of different thicknesses and a non-magnetic conducting layer sandwiched therebetween so that the magnetic vectors of the pair of layers are anti-parallel with no applied magnetic field, a magnetoresistive structure having a magnetic vector, and electrically insulating material sandwiched between the antiferromagnetically coupled structure and the magnetoresistive structure to form a magnetic tunneling junction.

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patent: 5729410 (1998-03-01), Fontana, Jr. et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5764567 (1998-06-01), Parkin
patent: 5768181 (1998-06-01), Zhu et al.
patent: 5801984 (1998-09-01), Parkin
patent: 5828598 (1998-10-01), Chen et al.
patent: 5841692 (1998-11-01), Gallagher et al.

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