Low switching current dual spin filter (DSF) element for...

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Reexamination Certificate

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C428S811100, C428S811200, C428S811300, C428S811400, C428S811500, C365S158000, C365S171000, C365S173000

Reexamination Certificate

active

08057925

ABSTRACT:
A dual spin filter that minimizes spin-transfer magnetization switching current (Jc) while achieving a high dR/R in STT-RAM devices is disclosed. The bottom spin valve has a MgO tunnel barrier layer formed with a natural oxidation process to achieve low RA, a CoFe/Ru/CoFeB—CoFe pinned layer, and a CoFeB/FeSiO/CoFeB composite free layer with a middle nanocurrent channel (NCC) layer to minimize Jc0. The NCC layer may have be a composite wherein conductive M(Si) grains are magnetically coupled with adjacent ferromagnetic layers and are formed in an oxide, nitride, or oxynitride insulator matrix. The upper spin valve has a Cu spacer to lower the free layer damping constant. A high annealing temperature of 360° C. is used to increase the MR ratio above 100%. A Jc0of less than 1×106A/cm2is expected based on quasistatic measurements of a MTJ with a similar MgO tunnel barrier and composite free layer.

REFERENCES:
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patent: 2008/0180991 (2008-07-01), Wang
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Co-pending US Patent HMG07-046/052, U.S. Appl. No. 12/082,155, filed Apr. 9, 2008, “A Low Switching Current MTJ Element for Ultra-High STT-RAM and a Method for Making the Same,” assigned to the same assignee as the present invention.
Co-pending US Patent HMG06-040, U.S. Appl. No. 11/717,347, filed Mar. 13, 2007, Spin Transfer MRAM Device with Novel Magnetic Free Layer, assigned to the same assignee as the present invention.

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