Low stress STI films and methods

Details Low stress STI films and methods Low stress STI films and methods

2007-07-17

2007-07-17

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257S374000, C257SE21545, C257SE21546

Reexamination Certificate

active

11252400

ABSTRACT:
The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.

REFERENCES:
patent: 7049211 (2006-05-01), Karim et al.
patent: 2004/0115898 (2004-06-01), Moghadam et al.
patent: 2004/0152341 (2004-08-01), Tan et al.
patent: 2004/0157399 (2004-08-01), Lee et al.
patent: 2005/0032327 (2005-02-01), Ohnishi et al.
patent: 2005/0048801 (2005-03-01), Karim et al.

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