Low stress, highly conformal CVD metal thin film

Details Low stress, highly conformal CVD metal thin film Low stress, highly conformal CVD metal thin film

1996-01-24

1999-09-14

Chaudhari, Chandra

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438680, H01L 2144

Patent

active

059536314

ABSTRACT:
A method is presented for depositing a low stress, highly conformal metal thin film, such as tungsten, on a substrate. A substrate is provided, and is heated to a first temperature. A first portion of the metal thin film is deposited on the substrate by reacting a first set of process gases. The deposition of the first portion of the metal thin film is stopped after a first length of time, and the substrate is heated to a second temperature, which is greater than the first temperature. A second portion of the metal thin film is deposited on the substrate by reacting a second set of process gases. The second portion of the metal thin film comprises the same metal as the first portion of the metal thin film. The deposition of the second portion of the metal thin film is stopped after a second length of time. Semiconductor devices having a low stress, highly conformal thin film are also described.

REFERENCES:
patent: 5529953 (1996-06-01), Shoda
patent: 5591671 (1997-01-01), Kim et al.
patent: 5599739 (1997-02-01), Merchant et al.

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