Low-strain laser structures with group III nitride active layers

Details Low-strain laser structures with group III nitride active layers Low-strain laser structures with group III nitride active layers

1996-11-19

1998-11-17

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

058387064

ABSTRACT:
A Group III nitride laser structure is disclosed with an active layer that includes at least one layer of a Group III nitride or an alloy of silicon carbide with a Group III nitride, a silicon carbide substrate, and a buffer layer between the active layer and the silicon carbide substrate. The buffer layer is selected from the group consisting of gallium nitride, aluminum nitride, indium nitride, ternary Group III nitrides having the formula A.sub.x B.sub.1-x N, where A and B are Group III elements and where x is zero, one, or a fraction between zero and one, and alloys of silicon carbide with such ternary Group III nitrides. In preferred embodiments, the laser structure includes a strain-minimizing contact layer above the active layer that has a lattice constant substantially the same as the buffer layer.

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