Low resistivity titanium silicide on heavily doped...

Details Low resistivity titanium silicide on heavily doped... Low resistivity titanium silicide on heavily doped...

2006-12-05

2006-12-05

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S592000, C438S630000, C438S647000

Reexamination Certificate

active

07144807

ABSTRACT:
Low resistivity, C54-phase TiSi2is formed in narrow lines on heavily doped polysilicon by depositing a bi-layer silicon film. A thin, undoped amorphous layer is deposited on top of a heavily doped layer. The thickness of the undoped amorphous Si is about 2.4 times the thickness of the subsequently deposited Ti film. Upon thermal annealing above 750° C., the undoped amorphous Si is consumed by the reaction of Ti+Si to form TiSi2, forming a low-resistivity, C54-phase TiSi2film on top of heavily doped polysilicon. The annealing temperature required to form C54 phase TiSi2is reduced by consuming undoped amorphous Si in the reaction of Ti and Si, as compared with heavily doped polysilicon. Narrow lines (<0.3 μm) of low-resistivity, C54-phase TiSi2films on heavily doped polysilicon are thus achieved.

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