Low resistant trench fill for a semiconductor device

Details Low resistant trench fill for a semiconductor device Low resistant trench fill for a semiconductor device

1996-04-09

1999-05-18

Wallace, Valencia Martin

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257302, 257303, 257304, 257306, 257372, H01L27/108;29/76

Patent

active

059052791

ABSTRACT:
A memory cell having a low storage node resistance and a method of manufacturing the same are provided. A trench type memory cell, in addition to storage node polysilicon, has other conductive material embedded in the storage node. Conductive material may be one of WSi, TiSi, W, Ti, and TiN. The additional conductive material provides a low storage node resistance which facilitates the realization of 256 Mbit memory cells and beyond.

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Patent Abstract of Japan; Publication No. 6-104398, published Apr. 15, 1994 for "Semiconductor Storage Device and Manufacture Thereof".

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