Low resistance void-free contacts

Details Low resistance void-free contacts Low resistance void-free contacts

2005-12-06

2010-06-15

Nguyen, Thanh (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE21179, C257SE21680

Reexamination Certificate

active

07737483

ABSTRACT:
A plug is formed by depositing a first material to partially fill an opening, leaving an unfilled portion with a lower aspect ratio than the original opening. A second material is then deposited to fill the remaining portion of the opening. The first material has good filling characteristics but has higher resistivity than the second material. The second material has low resistivity to give the plug low resistance.

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