Low resistance TMR read head fabricated by a novel oxidation...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

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Reexamination Certificate

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07986497

ABSTRACT:
The invention is a magnetoresistive read head with an MTJ configuration having an ultra-thin tunneling barrier layer with low resistance and high breakdown strength. The barrier layer is formed by natural oxidation of an ultra-thin (two atomic layers) Al or Hf—Al layer deposited on an electrode whose surface has first been treated to form an oxygen surfactant layer. The oxygen within the surfactant layer is first adsorbed within the ultra-thin layer and the layer is subsequently naturally oxidized to produce a uniform and stable Al2O3stoichiometry (or HfO stoichiometry) in the tunneling barrier layer.

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