Low resistance silicided substrate contact

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257305, 257354, 257652, 257756, 257763, 257770, H01L 2348, H01L 2944, H01L 2954, H01L 2960

Patent

active

053509420

ABSTRACT:
Low resistance contacts for establishing an electrical pathway to an integrated surface substrate are provided. The pathway is formed by the connection of a p+ doped channel stop region with a p+ doped extrinsic layer. P+ doped polysilicon contacts are positioned on the substrate surface. In one embodiment, a metal silicide layer connects the polysilicon contacts and overlies the p+ doped extrinsic layer.

REFERENCES:
patent: 3955269 (1976-05-01), Magdo et al.
patent: 4272776 (1981-06-01), Weijland et al.
patent: 4276557 (1981-06-01), Levinstein et al.
patent: 4374700 (1983-02-01), Scott et al.
patent: 4484388 (1984-11-01), Iwasaki
patent: 4507847 (1985-04-01), Sullivan
patent: 4536945 (1985-08-01), Gray et al.
patent: 4609568 (1986-09-01), Koh et al.
patent: 4764480 (1988-08-01), Vora
patent: 4795722 (1989-01-01), Welch et al.
patent: 4829025 (1989-05-01), Iranmanesh
patent: 4897364 (1990-01-01), Nguyen
patent: 4924284 (1990-05-01), Beyer et al.
Chiu, et al., "A Bird's Beak Free Local Oxidation Technology Feasible to VSLI Circuits Fabrication" IEEE Transactions on Electron Devices, vol. ED-29, No. 4, pp. 536-540, Apr., 1982.
Momose, et al., "1 .mu.m n-well CMOS/Bipolar Technology," IEDM Transactions (Feb. 1985) p. 217.
Kapoor, et al., "A High Speed High Density Single-Poly ECL Technology for Linear/Digital Applications" 1985 Custom Integrated Circuits Conference.
Takemura, et al., "BSA Technology for Sub-100 mn Deep Base Bipolar Transistors" IEDM Technical Digest (1987), pp. 375-377.
Gomi, et al., "A Sub-30 psec Si Bipolar LSI Technology" IEDM Technical Digest (1988) pp. 744-747.
Brassington, et al., "An Advanced Single-Level Polysilicon Submicrometer BiCMOS Technology," IEEE Trans. Elect. Devices.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Low resistance silicided substrate contact does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistance silicided substrate contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistance silicided substrate contact will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1267339

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.