Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-12
2000-11-28
Nelms, David
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438239, H01L 2144
Patent
active
061535176
ABSTRACT:
A method is disclosed for forming a low resistance poly landing pad which is achieved by shunting the polysilicon of a landing pad with metallic conductors. A window is opened through a first dielectric layer to expose a conducting region over a semiconductor substrate. A metallic layer, deposited overall, is followed by an overall deposition of a polysilicon layer, with the layers being sufficient to fill the window completely. Metal and polysilicon outside the window is removed by chemical/mechanical polishing which also provides global planarization. Salicidation provides a silicide cover over the exposed surface of polysilicon, which was formed by the polishing. A second dielectric is deposited and an opening is formed to the landing pad. Electrical contact is made between metallization on the second dielectric layer and the salicide of the landing pad either, directly by simultaneous deposition of the metallization on the dielectric and the landing pad, or, by first forming a plug in the opening and then depositing the metallization.
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Chen Yi-Te
Chuang Kun-Jung
Hsu Shou-Yi
Lui Hon-Hung
Ackerman Stephen B.
Nelms David
Nhu David
Saile George O.
Taiwan Semiconductor Manufacturing Company
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