Low-resistance interconnects and methods of making same

Details Low-resistance interconnects and methods of making same Low-resistance interconnects and methods of making same

2011-01-04

2011-01-04

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S682000, C438S684000, C257SE23141

Reexamination Certificate

active

07863176

ABSTRACT:
Devices and methods for providing low-resistance interconnects in a semiconductor device are provided. Specifically, one or more embodiments of the present invention relate to disposing a conductive material in a trench without disposing a resistive barrier material between the conductive material and the sidewalls of the trench so that the conductive material takes up the full width of the trench. For example, the trench may be disposed over one or more contacts made of a barrier material such as titanium nitride that also acts as a seed, and the conductive material may be grown on top of the titanium nitride to fill the trench.

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patent: 2008/0176396 (2008-07-01), Futase et al.

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