Low resistance gate electrode layer and method of making same

Details Low resistance gate electrode layer and method of making same Low resistance gate electrode layer and method of making same

1997-12-23

2000-02-15

Mulpuri, Savitri

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438697, 438303, 438655, 438664, H01L 21283, H01L 21336

Patent

active

060252545

ABSTRACT:
3
A MOSFET having a low resistance gate electrode structure includes silicided source and drain regions, and a silicided gate electrode wherein the thickness of the silicide layer superjacent the gate electrode is substantially thicker than the silicide layers overlying the source and drain regions.
A process in accordance with the present invention decouples the silicidation of MOSFET source/drain regions from the silicidation of the gate electrode.

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