Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-06-14
2011-06-14
Ho, Hoang-Quan T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S096000, C257S099000, C257S745000, C257S762000, C257S764000, C257S766000, C257SE33025, C257SE33063, C257SE33064, C257SE33068, C438S029000, C438S047000, C438S605000, C438S608000, C438S609000
Reexamination Certificate
active
07960746
ABSTRACT:
A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process.
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Cho Jae-Hee
Kim Hyun-Soo
Kwak Joon-seop
Leem Dong-seok
Seong Tae-Yeon
Ho Hoang-Quan T
Kile Park Goekjian Reed & McManus PLLC
Samsung LED Co., Ltd.
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