Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-06-16
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257753, 257915, H01L 2702
Patent
active
053410165
ABSTRACT:
A composite semiconductor structure which replaces polysilicon for conductive device elements and provides lower resistance interconnections between devices. The preferred structure is a conductive adhesion layer deposited in place of polysilicon in contact with a conductive metal layer traversing the interconnection. The preferred material for the adhesion layer is tungsten nitride, and for the metal layer--tungsten. If polysilicon is retained for device elements, the adhesion and metal layers may be placed in contact with the polysilicon element and along the interconnect structure providing an interconnect with lower resistance. Increased adhesion may be obtained by adding a cap layer of dielectric material atop the metal layer.
REFERENCES:
patent: 5221853 (1993-06-01), Joshi et al.
patent: 5268590 (1993-12-01), Pfiester et al.
New Method to Improve the Adhesion Strength of Tungsten Thin Film on Silcon by W.sub.2 N Glue Layer, Appl. Phys. Lett. 61(5), 3 Aug. 1992.
Meikle Scott G.
Prall Kirk D.
Sandhu Gurtej S.
Buchaca John D.
Hille Rolf
Limanek Robert
Micron Semiconductor Inc.
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