Low resistance contacts to semiconductor materials

Details Low resistance contacts to semiconductor materials Low resistance contacts to semiconductor materials

1990-08-31

1991-12-24

James, Andrew J.

Fishing, trapping, and vermin destroying

357 65, 437180, 437184, H01L 2348, H01L 2940, H01L 2144, H01L 2148

Patent

active

050757563

ABSTRACT:
An ohmic contact to a III-V semiconductor material comprises substantially eighty to ninety-five percent by weight of tungsten, five to ten percent by weight of antimony, and zero to fifteen percent by weight of indium. The materials are simultaneously sputtered from separate targets in a sputtering reactor.

REFERENCES:
patent: 3601888 (1971-08-01), Engeler et al.
patent: 4012767 (1977-03-01), Brown et al.
patent: 4270136 (1981-05-01), Toyokura et al.
patent: 4523212 (1985-06-01), Hawrylo
patent: 4545115 (1985-10-01), Bauer et al.
patent: 4662063 (1987-05-01), Collins et al.
patent: 4829363 (1989-05-01), Thomas et al.
patent: 4868637 (1989-09-01), Clements et al.
patent: 4872047 (1989-10-01), Fister et al.
"On the Formation of Binary Compounds in Au/InP System", by A. Piotrowska et al., Journal of Applied Physics, vol. 52, No. 8, Aug. 1981, pp. 5112-5117.
"The Migration of Gold from the p-Contact as a Source of Dark Spot Defects in InP/InGaAsP LED's", by A. K. Chin et al., IEEE Transactions on Electron Devices, vol. ED-30, No. 4, Apr. 1983, pp. 304-309.
"The Design and Realization of a High Reliability Semiconductor Laser for Single-Mode Fiber-Optical Communication Links", by A. R. Goodwin et al., Journal of Lightwave Technology, vol. 6, No. 9, Sep. 1988, pp. 1424-1434.
"Interaction Between Zinc Metallization and Indium Phosphide", by S. Nakahara et al., Solid-State Electronics, vol. 27, No. 6, Jun. 1984, pp. 557-564.
"Thermally Stable Ohmic Contact to n-Type GaAs, I. MoGeW Contact Metal", by M. Murakami et al., Journal of Applied Physics, vol. 62, No. 8, Oct. 15, 1987.

Affiliated with

Also associated with

Rating

Low resistance contacts to semiconductor materials does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low resistance contacts to semiconductor materials, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low resistance contacts to semiconductor materials will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-47741