Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-03-07
2006-03-07
Gurley, Lynne A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257S763000, C257S764000, C257S774000, C257S775000
Reexamination Certificate
active
07009298
ABSTRACT:
A contact structure is provided incorporating an amorphous titanium nitride barrier layer formed via low-pressure chemical vapor deposition (LPCVD) utilizing tetrakis-dialkylamido-titanium, Ti(NMe2)4, as the precursor.
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Doan Trung T.
Lowrey Tyler A.
Sandhu Gurtej S.
Gurley Lynne A.
TraskBritt
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