Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Diffusing a dopant
Reexamination Certificate
2006-09-06
2008-08-05
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Diffusing a dopant
C438S681000, C257SE21548
Reexamination Certificate
active
07407875
ABSTRACT:
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.
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International Search Report and Written Opinion—FIS920060187. Date of Mailing—Mar. 12, 2007.
DeHaven Patrick W.
Deshpande Sadanand V.
Hon Wong Keith Kwong
Madan Anita
Anya Igwe U.
Baumeister Bradley W.
Cai Yuanmin
International Business Machines - Corporation
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