Low resistance and reliable copper interconnects by variable...

Details Low resistance and reliable copper interconnects by variable... Low resistance and reliable copper interconnects by variable...

2006-04-11

2006-04-11

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S695000, C438S003000

Reexamination Certificate

active

07026244

ABSTRACT:
A method and system is provided for efficiently varying the composition of the metal interconnects for a semiconductor device. A metal interconnect according to the present disclosure has an intermediate layer on a dielectric material, the intermediate layer having a relatively higher concentration of an impurity metal along with a primary metal, the impurity metal having a lower reduction potential than the primary metal. The metal interconnect has a main layer of the metal alloy interconnect on top of the intermediate layer and surrounded by the intermediate layer, the main layer having a relatively higher concentration of the primary metal than the intermediate layer, wherein the intermediate and main layers of the metal alloy interconnect each maintains a material uniformity.

REFERENCES:
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patent: 6344129 (2002-02-01), Rodbell et al.
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patent: 2001/0008226 (2001-07-01), Hung et al.
patent: 2005/0029659 (2005-02-01), Ko et al.

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