Low profile semiconductor device with like-sized chip and mounti

Details Low profile semiconductor device with like-sized chip and mounti Low profile semiconductor device with like-sized chip and mounti

1994-10-21

1998-03-31

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Die bond

257704, 257684, 257778, H01L 2348

Patent

active

057342016

ABSTRACT:
A low profile semiconductor device (24) is manufactured by mounting a semiconductor die (26) onto a substrate (28) using an interposer (30). The interposer couples an active surface (32) of the die (26) to conductive traces (33) on the top surface of the substrate. The interposer is directionally conductive so that electrical conductivity is limited to the z-direction through thickness of the interposer. The interposer both affixes the die to the substrate and provides the first level of interconnects for the device. The inactive surface (36) of the die can be exposed for efficient thermal dissipation. An optional heat spreader (50) may be added for increased thermal management. The device may be overmolded, glob-topped, capped, or unencapsulated. Separate die-attach and wire bonding processes are eliminated. A second level of interconnects are provided by either solder balls (38), solder columns (44), or pins (64).

REFERENCES:
patent: 4276558 (1981-06-01), Ho et al.
patent: 4514752 (1985-04-01), Engel et al.
patent: 4811081 (1989-03-01), Lyden
patent: 4903118 (1990-02-01), Iwade
patent: 5136365 (1992-08-01), Pennisi et al.
patent: 5140405 (1992-08-01), King et al.
patent: 5147210 (1992-09-01), Patterson et al.
patent: 5183969 (1993-02-01), Odashima
patent: 5216278 (1993-06-01), Lin et al.
patent: 5311059 (1994-05-01), Banerji et al.
patent: 5319242 (1994-06-01), Carney et al.

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