Active solid-state devices (e.g. – transistors – solid-state diode – Lead frame – On insulating carrier other than a printed circuit board
Reexamination Certificate
2005-01-25
2005-01-25
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Lead frame
On insulating carrier other than a printed circuit board
C257S687000
Reexamination Certificate
active
06847102
ABSTRACT:
A package substrate (12, 52) has a first surface, a second surface opposite a first surface, and a cavity (22, 70) formed in the first surface that extends into the package substrate. The cavity has a cavity wall substantially perpendicular to the first and second surfaces. An integrated circuit die (20, 60) is placed in the cavity, and a conductive material (24, 72) is placed in the cavity to thermally couple an outer wall of the integrated circuit to the cavity wall. The conductive material improves the heat dissipation path between the integrated circuit die and the package substrate. The cavity may extend through the package substrate to the second surface such that the second surface of the package substrate is substantially coplanar to a surface of the integrated circuit die. An encapsulation layer (28, 78) may be formed over the conductive material, integrated circuit die, and at least a portion of the first surface of the package substrate.
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International Search Report PCT/US03/27436.
De Oca Jose Antonio Montes
Gerber Mark A.
Joiner Bennett A.
Thompson Trent A.
Cao Phat X.
Chiu Joanna G.
Freescale Semiconductor Inc.
Hill Daniel D.
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