Low pressure vapor phase growth apparatus

Details Low pressure vapor phase growth apparatus Low pressure vapor phase growth apparatus

1990-02-07

1991-07-23

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118724, C23C 1600

Patent

active

050334077

ABSTRACT:
A low pressure vapor phase growth apparatus is disclosed. The apparatus comprises a window made of a light-transmissive material, a gas feeder for feeding a reactive gas, an exhauster for pumping gases out after a chemical reaction, a lamp for effecting radiant heating of a substrate with a radiation emitted therefrom and transmitted through said light-transmissive window, and a cooling mechanism for forcibly cooling said light-transmissive window. The substrate and the light-transmissive window are maintained in no mutual contact with a gap therebetween having a width of at most the mean free path of a gas existing in the gap. The reactive gas fed through the gas feeder undergoes the chemical reaction on the obverse surface of the substrate to form a thin film thereon.

REFERENCES:
patent: 4913929 (1990-04-01), Moslehi
G. Lewin, Fundamentals of Vacuum Science and Technology, 1965, pp. 2-10.
P. A. Redman, J. P. Hobson and E. V. Kornelsen, The Physical Basis of Ultrahigh Vacuum, 1968, pp. 18-23.

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