Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-06-10
1998-12-22
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419226, 20429807, 20429819, 20429826, 20429828, C23C 1434
Patent
active
058513655
ABSTRACT:
A method and apparatus for producing optical films on substrates having extremely high packing densities of the same quality as those films produced by ion beam sputtering including a vacuum chamber with a conventional magnetron sputtering system and unusually high speed vacuum pump means. The low pressure of inert gas created by said high speed vacuum pump means being in the range of 5.times.10.sup.-5 Torr to 1.5.times.10.sup.-4 Torr and the magnetron sputtering system being at least 16" from said substrates. A gas manifold around the magnetron and target material confines the inert working gas in the vicinity of the magnetron and as the gas diffuses and expands into the chamber the high speed vacuum pump means removes the expanded gas from the chamber at a high speed. An ion gun directs ionized reactant gas toward the substrates which has the effect of improving film stoichometry as well as reducing reactant gas at the magnetron. Multiple magnetron assemblies, multiple target materials and compound target materials may be used.
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Corning Oca Corporation
Greener, Esq. William
Nguyen Nam
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