Low pressure CVD apparatus

Details Low pressure CVD apparatus Low pressure CVD apparatus

1996-07-11

1998-04-28

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118728, 118500, 432241, C23C 1600

Patent

active

057439672

ABSTRACT:
There is disclosed a low-pressure CVD process which uses active gases and which provides improved uniformity of the film thickness distribution across the substrate while maintaining high throughput. At least two substrates are stacked at a given spacing inside a reaction vessel. Films are to be formed over the substrates. Annular corrective frames are mounted between the successive substrates and opposite to peripheral portions of the substrates.

REFERENCES:
patent: 5169453 (1992-12-01), Takagi
patent: 5169684 (1992-12-01), Takagi
patent: 5192371 (1993-03-01), Shuto
patent: 5458688 (1995-10-01), Watanabe
patent: 5480678 (1996-01-01), Rudolph
patent: 5516283 (1996-05-01), Schrems

Affiliated with

Also associated with

Rating

Low pressure CVD apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Low pressure CVD apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Low pressure CVD apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1528611