Low pressure chemical vapor deposition apparatus, with removal s

Details Low pressure chemical vapor deposition apparatus, with removal s Low pressure chemical vapor deposition apparatus, with removal s

1991-10-08

1993-12-28

Hearn, Brian E.

Coating apparatus

Gas or vapor deposition

With treating means

118724, 118725, 118715, C23C 1656, C23C 1646

Patent

active

052735869

ABSTRACT:
A low pressure chemical vapor deposition apparatus is provided for removing particulate matter. The apparatus includes a bell jar, a quartz tube installed in the bell jar, a slotted quartz boat installed in the quartz tube and for holding wafers which are to be coated with film. The apparatus further includes a gas line for introducing a reactant gas into the chamber within the quartz tube, where the quartz boat is located, a gas inlet made of quartz, an MFC, a valve 10 a three-zone furnace for heating the quartz tube to a reaction temperature, a pump 4 for pumping out air and reactant gas from the chamber within the quartz tube, a door plate for placing the slotted quartz boat in the chamber a power source device for causing an electric current to charge contacts with a positive or negative bias which are provided on the door plate, and a main controller for operating the power source device.

REFERENCES:
patent: 4962727 (1990-10-01), Harada
patent: 5015330 (1991-05-01), Okumura et al.
patent: 5029554 (1991-07-01), Miyashita et al.
patent: 5116784 (1992-05-01), Ushikawa
Webster's II New Riverside Dictionary, p. 422, 1988.
Wolf, S. and R. N. Tauber, Silicon Processing for the VLSI Era; vol. 1-Process Technology (Lattice Press) 1990, pp. 192-195.
Pan, P., "Characteristics of Thin LPCVD Silicon Oxynitride Films", EMIS Datareview RN-10183, Oct. 1987, pp. 668-671.

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