Low power voltage sensing circuit

Static information storage and retrieval – Systems using particular element – Semiconductive

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Details

307530, 36518901, 365226, G11C 1140

Patent

active

051811871

ABSTRACT:
A voltage sensing circuit receives an input voltage signal and generates an output voltage signal. The circuit has a sensing node. A first P-type MOS transistor is connected having one of its ends to receive the input voltage signal with the other end connected to the sensing node to provide a sensing signal. A first voltage source is connected to the gate of the first P-type transistor. A voltage dropping circuit receives the input voltage signal and generates a first drop voltage signal lower than the input voltage signal. A second P-type MOS transistor has one end connected to receive the first drop voltage signal. The first voltage source is also connected to the gate of the second P-type MOS transistor. A third N-type MOS transistor has a gate connected to the other end of the second P-type MOS transistor. The third N-type MOS transistor has one of its ends connected to the sensing node. A second voltage source is connected to the other end of the third N-type MOS transistor. A driving circuit comprising of an inverter is connected to the sensing node for receiving the sensing signal and for producing the output voltage signal in response thereto.

REFERENCES:
patent: 4953127 (1990-08-01), Nagahashi et al.
patent: 5051958 (1991-09-01), Arakawa
patent: 5070481 (1991-12-01), Haubner et al.

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