Low-power semiconductor memory device

Static information storage and retrieval – Systems using particular element – Flip-flop

Reexamination Certificate

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Details

C365S226000

Reexamination Certificate

active

06914803

ABSTRACT:
A logic circuit in a system LSI is provided with a power switch so as to cut off the switch at the time of standby, reducing leakage current. At the same time, an SRAM circuit of the system LSI controls a substrate bias to reduce leakage current.

REFERENCES:
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patent: 5764566 (1998-06-01), Akamatsu et al.
patent: 6046627 (2000-04-01), Itoh et al.
patent: 6101146 (2000-08-01), Maesako et al.
patent: 6335873 (2002-01-01), Kawaguchi et al.
patent: 6639827 (2003-10-01), Clark et al.
patent: 7-86916 (1995-03-01), None
patent: 2000-207884 (2000-07-01), None
patent: 2001-93275 (2001-04-01), None

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