Static information storage and retrieval – Systems using particular element – Flip-flop
Reexamination Certificate
2007-10-23
2007-10-23
Tran, Andrew Q. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Flip-flop
C365S156000, C365S227000, C257S393000, C257S903000
Reexamination Certificate
active
11186395
ABSTRACT:
Low-power, all-p-channel enhancement-type metal-oxide semiconductor field-effect transistor (PMOSFET) SRAM cells are disclosed. A PMOSFET SRAM cell is disclosed. The SRAM cell can include a latch having first and second PMOSFETs for storing data. Further, a gate of the first PMOSFET is connected to a drain of the second PMOSFET at a first memory node. A gate of the second PMOSFET is connected to a drain of the first PMOSFET at a second memory node. The SRAM cell can also include third and fourth PMOSFETs forming a pull-down circuit. A source of the third PMOSFET is connected to the first memory node. Further, a source of the fourth PMOSFET is connected to the second memory node. The SRAM cell can include access circuitry for accessing data at the first and second memory nodes for read or write operations.
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International Preliminary Report on Patentability dated Feb. 1, 2007.
Kolar Pramod
Massoud Hisham Z.
Jenkins Wilson Taylor & Hunt, P.A.
Tran Andrew Q.
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