Low-power multiple-channel fully depleted quantum well CMOSFETs

Details Low-power multiple-channel fully depleted quantum well CMOSFETs Low-power multiple-channel fully depleted quantum well CMOSFETs

2007-08-07

2007-08-07

Mai, Anh Duy (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S408000, C257SE27060, C257SE29027

Reexamination Certificate

active

11445345

ABSTRACT:
A multiple-channel semiconductor device has fully or partially depleted quantum wells and is especially useful in ultra large scale integration devices, such as CMOSFETs. Multiple channel regions are provided on a substrate with a gate electrode formed on the uppermost channel region, separated by a gate oxide, for example. The vertical stacking of multiple channels and the gate electrode permit increased drive current in a semiconductor device without increasing the silicon area occupied by the device.

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