Static information storage and retrieval – Read/write circuit – Data refresh
Reexamination Certificate
2011-04-19
2011-04-19
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Data refresh
C365S205000, C365S207000, C365S208000, C365S189050, C365S189090, C365S226000
Reexamination Certificate
active
07929367
ABSTRACT:
Circuits and methods for suppressing integrated circuit leakage currents are described. Many of these circuits and methods are particularly well-suited for use in dynamic memory circuits. Examples describe the use of power, ground, or both and power and ground source transistors used for generating virtual voltages. An aspect of the invention describes lowering refresh current. An aspect describes reducing the standby current. An aspect of the invention describes lowering leakage resulting from duplicated circuits, such as row decoders and word line drivers. An aspect describes methods of performing early wake-up of source transistors. A number of source transistor control mechanisms are taught. Circuit layouts methods are taught for optimizing integrated circuit layouts using the source transistors.
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Choi Myung Chan
Han Sang-Kyun
Kim Young Tae
Lee Sun Hyoung
Son Sung Ju
O'Banion John P.
Phan Trong
ZMOS Technology, Inc.
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